FIB/SEM

XRF

SEM/EDS

Profiling

TEM/EDS

Other Techniques

AFM

• Field emission gun gives > 3nm E-beam resolution
• Ion-beam resolution > 10nm
• Standard milling, Enhanced Etch, and Selective Carbon Milling available
• Metal deposition
• Milling on submicron scale
• High resolution e-beam image of x-section in progress
• 52º maximum tilt angle

• Accomodates 150 mm round wafers and smaller
• Wafer, die, and irregular samples
• Cross-section of samples up to 5 mm thick

• 3-D defect/structure review
• Precision cross-sectioning on submicron scale
• Metrology measurement
• IC circuit diagnostics and modification
• TEM sample preparation

• Field emission gun gives >3nm resolution
• 150mm wafer
navigation
• Qualitative and quantitative elemental analysis
• Sensitive to elements down to carbon
• Analysis area down to 0.1mm
• Sensitivity ~1 at%
  

• Accomodates 150 mm wafers and smaller samples

• Failure Analysis: cross-section and plan-view examination
• Compositional microanalysis and mapping
• Devices from data storage, MEMS, semiconductor, and other industries

• When operated at 200kV, patented Ultra-Twin objective lens (Cs=0.5mm) gives 0.19 nm point resolution & 0.14 nm line resolution
• Computerized site-entry stage
• 24° max tilt
• Nanoprobe
• Low dose for e-beam sensitive samples
• Digital and film image recording
• EDS qualitative and quantitative elemental analysis
• Boron and heavier elements detectable
• Analysis area as small as ~10nm

• Full range of materials in bulk, powder and suspension
• FIB sample preparation allows nondestructive wafer level sampling of up to 150 mm wafers
• Sample preparation by wedge polish also available

• Microstructure, defect and composition examination for routine analysis and subnanometer research
• Thin film and interfacial structure characterization
• Electron diffraction and phase identification
• High resolution imaging and low dose imaging.
• Devices from data storage, MEMS, semiconductor and other industries

• 2nm lateral resolution
• 0.07nm vertical resolution
• Automated analysis of 100 areas up to 90 um square
• AFM, LFM, and MFM modes
  

• 200 mm and smaller diameter wafers and irregular geometries
• 10 mm maximum thickness (up to 17 mm thick for certain geometries)

• Surface roughness
• Film thickness
• Critical dimension measurement
• Geometry measurement
• Domain pattern analysis
• Grain size measurement
• Corrosion evaluation
• 3D analysis

• Rh X-ray tube
• Spatial resolution of 150 sq. mm up to 3mm thick
• 1-20keV window
• %RSD <0.25%
• In atmosphere, silicon and heavier elements are detectable
• With helium purge, carbon and heavier elements are detectable

• Metals, compressed powders, liquids, and fibers
• 200 mm and smaller wafers

• Quantitative and qualitative elemental analysis
• Multi-element surveys
• Metallic contamination
• Trace Analysis
• Composition and thickness

• 0.25% precision for thickness greater than 4000Å (10% for 1000Å)
• Vertical Range 131mm
• 100Å Horizontal resolution
• 60mm Horizontal Range

• 150 mm and smaller wafers
• Up to 25 mm thick

• Step height
• Film Thickness
• Lateral distance
• Surface Texture Characterization

• SIMS (Secondary Ion Mass Spectrometry)

• XPS (X-Ray Photoelectron Spectroscopy)

• Please contact us regarding sample constraints

• Dopant & impurity depth profiling (SIMS)
  Surface analysis of materials